On carrier spillover in c- and m-plane InGaN light emitting diodes
- 16 November 2009
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (20)
- https://doi.org/10.1063/1.3266833
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wellsApplied Physics Letters, 2008
- On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriersApplied Physics Letters, 2008
- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droopApplied Physics Letters, 2008
- On the importance of radiative and Auger losses in GaN-based quantum wellsApplied Physics Letters, 2008
- Defect related issues in the “current roll-off” in InGaN based light emitting diodesApplied Physics Letters, 2007
- Origin of efficiency droop in GaN-based light-emitting diodesApplied Physics Letters, 2007
- Auger recombination in InGaN measured by photoluminescenceApplied Physics Letters, 2007
- Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping densitySemiconductors, 2006
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics, 1999
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1993