The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
Open Access
- 1 July 1977
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 20 (7), 609-616
- https://doi.org/10.1016/0038-1101(77)90100-9
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in-Type SiliconPhysical Review B, 1973
- Electron Mobility in Ge, Si, and GaPPhysica Status Solidi (b), 1972
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1963
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1959
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1956
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductorsThe London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 1955
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Neutral Impurity Scattering in SemiconductorsPhysical Review B, 1950