Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors
- 3 December 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (23)
- https://doi.org/10.1063/1.2823607
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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