Evaluation of dislocation‐related defects in GaN using deep‐level transient spectroscopy
- 1 June 2007
- journal article
- Published by Wiley in physica status solidi (c)
- Vol. 4 (7), 2568-2571
- https://doi.org/10.1002/pssc.200674704
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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