Thermodynamic Study on SiCl4 Hydrogenation System in Siemens Process
- 1 January 2011
- journal article
- Published by Taylor & Francis Ltd in JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
- Vol. 44 (4), 214-223
- https://doi.org/10.1252/jcej.10we327
Abstract
The study of fifteen possible chemical reaction in the SiCl4 hydrogenation system in Siemens process based on the thermodynamic data for related pure compositions are reported in this paper. Curves of ΔGmθ-T for the 15 chemical reactions in the system have been fitted. The five independent reactions in the process have also been obtained and the relations of Κpθ and temperature have been fitted. Furthermore, diagrams of the equilibrium gas phase composition versus temperature under pressures of 1 atm, 3 atm, and 5 atm and feed mole ratios (χH2 / χSiCl4) of 2 : 1, 3 : 1, and 4 : 1 are present herein. Finally, the influencing factors (such as temperature, pressure and the feeding molar ratio) on the conversion ratio from SiCl4 to SiHCl3 have been studied. Diagrams of the η-conversion ratio are presented as a function of temperature, pressure and feed mole ratio, respectively. The optimum operation parameters in the actual production are determined by thermodynamic and kinetic studies. The results show that the conditions of 1100°C, 3 atm and feed mole ratio (χH2 / xSiCl4) of 4 : 1 are most preferable. Under these conditions, the conversion ratio from SiCl4 to SiHCl3 is 24.81%, contrary to the less than 20% in actual production.Keywords
This publication has 7 references indexed in Scilit:
- Si Deposition from Chlorosilanes: II . Numerical Analysis of Thermofluid Effects on DepositionJournal of the Electrochemical Society, 1994
- Cost‐benefit analysis of high‐eficiency cast polycrystalline silicon solar cell sequencesProgress in Photovoltaics: Research and Applications, 1994
- An ab initio MO study of the thermal decomposition of chlorinated monosilanes, SiH4-nCln (n = 0-4)The Journal of Physical Chemistry, 1993
- Chemical Processes in Vapor Deposition of Silicon: I . Deposition from and Etching byJournal of the Electrochemical Society, 1975
- High Temperature Reactions in the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1974
- A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1972
- Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon SubstratesJournal of the Electrochemical Society, 1962