GaN Power Transistors on Si Substrates for Switching Applications
Top Cited Papers
- 20 May 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 98 (7), 1151-1161
- https://doi.org/10.1109/jproc.2009.2034397
Abstract
In this paper, GaN power transistors on Si substrates for power switching application are reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important configuration in order to realize a low loss and high power devices as well as one of the cost-effective solutions. Current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate. Furthermore, attempts for normally off GaN-FETs were examined. A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance (Ron) and a high breakdown voltage (Vb).Keywords
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