Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs
- 25 September 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (10), 793-795
- https://doi.org/10.1109/led.2006.882522
Abstract
Enhancement-mode Si3N4/AlGaN/GaN metal-insulator-semiconductor HFETs (MISHFETs) with a 1-mum gate footprint are demonstrated by combining CF4 plasma treatment technique and a two-step Si3N4 deposition process. The threshold voltage has been shifted from -4 [for depletion-mode HFET] to 2 V using the techniques. A 15-nm Si3N4 layer is inserted under the metal gate to provide additional isolation between the gate Schottky contact and AlGaN surface, which can lead to reduced gate leakage current and higher gate turn-on voltage. The two-step Si 3N4 deposition process is developed to reduce the gate coupling capacitances in the source and drain access region, while assuring the plasma-treated gate region being fully covered by the gate electrode. The forward turn-on gate bias of the MISHFETs is as large as 7 V, at which a maximum current density of 420 mA/mm is obtained. The small-signal RF measurements show that the current gain cutoff frequency (fT) and power gain cutoff frequency (fmax) are 13.3 and 23.3 GHz, respectivelyKeywords
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