Characterisation of rhenium Schottky contacts on n-type AlxGa1–xN
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (9), 745-746
- https://doi.org/10.1049/el:19990489
Abstract
The electrical characteristics of Re Schottky contacts on AlxGa1–xN (x = 0, 0.15, 0.22 and 0.26) grown by MOCVD on sapphire substrates have been investigated. The effective barrier heights were obtained from current-voltage and capacitance-voltage measurements and were found to increase with aluminium concentration.Keywords
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