Quantum dot laser diode with low threshold and low internal loss
- 1 January 2009
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 45 (1), 54-56
- https://doi.org/10.1049/el:20092873
Abstract
Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low internal optical loss. The broad-area laser diode operates at the wavelength 1.22 µm and delivers 2 W of power from a 1.6 cm-long cavity with uncoated facets, with a lasing threshold current density of 10.4 A/cm2. The laser diode's internal waveguide loss is extracted from cavity length measurements to be ∼0.25 cm−1. The interdependence of threshold current density and internal optical loss is discussed.Keywords
This publication has 5 references indexed in Scilit:
- Very-low-threshold current density continuous-wave quantum-dot laser diodeElectronics Letters, 2008
- 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current densityElectronics Letters, 2004
- Low-threshold oxide-confined 1.3-μm quantum-dot laserIEEE Photonics Technology Letters, 2000
- 1.5 [micro sign]m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output powerElectronics Letters, 1996
- Low threshold, large To injection laser emission from (InGa)As quantum dotsElectronics Letters, 1994