Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
- 1 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 681-684
- https://doi.org/10.4028/www.scientific.net/msf.433-436.681
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ru Schottky Barrier Contacts to n- and p-type 6H-SiCMaterials Science Forum, 2001
- Comparison of morphology and interfacial composition of Pd ultrathin films on 6H–SiC and 4H–SiC at different annealing temperaturesJournal of Vacuum Science & Technology A, 1999
- Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperatureJournal of Electronic Materials, 1999
- Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensorsJournal of Vacuum Science & Technology A, 1997
- Schottky barrier height of metal contacts to p-type alpha 6H-SiCJournal of Applied Physics, 1994