Schottky barrier height of metal contacts to p-type alpha 6H-SiC
- 1 May 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (9), 4548-4550
- https://doi.org/10.1063/1.355948
Abstract
A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p‐type Si‐face (0001) and C‐face (0001̄) 6H‐SiC by using x‐ray photoemission spectroscopy is reported. The Schottky barrier height φB ranges from 1.17 to 2.56 eV and is influenced by the contact metal work function and the 6H‐SiC crystal face. A comparison with prior φB values for n‐type material indicates that for similarly prepared metal/6H‐SiC interfaces (including those which have been annealed) φBp and φBn sum to the 6H‐SiC band gap.Keywords
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