Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer
- 30 November 2000
- journal article
- Published by Elsevier BV in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 8 (4), 323-327
- https://doi.org/10.1016/s1386-9477(00)00160-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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