Short-Period Superlattices of (GaP)n(AlP)n Grown by Metalorganic Vapor Phase Epitaxy
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7B), L1244
- https://doi.org/10.1143/jjap.30.l1244
Abstract
Short-period superlattices of (GaP) n (AlP) n have been grown by metalorganic vapor phase epitaxy. X-ray diffraction measurements have confirmed the formation of the structures, where n ranges from 4 to 10. Low-temperature photoluminescence has shown characteristic emission peaks, which shift toward higher energies and tend to increase in intensity with decreasing n. These results, together with the band discontinuity between GaP and AlP which was estimated from that between GaP and Al0.6Ga0.4P, strongly indicate that the (GaP) n (AlP) n system forms the superlattices of a type-II band alignment.This publication has 10 references indexed in Scilit:
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