Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
- 1 September 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (9), 1190-1198
- https://doi.org/10.1109/t-ed.1984.21687
Abstract
Low-frequency 1/f noise in Si n-channel MOSFET's is measured from weak to strong inversion, through the relative spectral density of the drain current fluctuationsS_{I}_{D}/I^{2}_{D}. Under specific conditions, a plateau is observed in the variations ofS_{I}_{D}/I^{2}_{D}versus the gate voltage in weak inversion followed by a steep decrease in strong inversion. A modified trapping noise theory based on the McWhorter's assumptions and valid in all the working regimes is developed to account for this behavior. Excellent agreement is obtained with the variations of several parameters: gate and drain biases, geometry, oxide and depletion capacitance, temperature, and technologies. The influence of fast interface states is particularly studied and is related to the noise variations and the oxide trap densities.Keywords
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