Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates
- 13 May 2008
- journal article
- review article
- Published by Wiley in physica status solidi (c)
- Vol. 5 (6), 2247-2249
- https://doi.org/10.1002/pssc.200778648
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Ga In N ∕ Ga N growth optimization for high-power green light-emitting diodesApplied Physics Letters, 2004
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device DesignJapanese Journal of Applied Physics, 2000
- Temperature dependence of Raman scattering in single crystal GaN filmsApplied Physics Letters, 1999