Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures
- 9 February 2009
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsJournal of Applied Physics, 2008
- Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometryApplied Physics Letters, 2008
- Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistorsApplied Physics Letters, 2007
- Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mmIEEE Electron Device Letters, 2005
- Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devicesMaterials Science and Engineering: R: Reports, 2004
- Positive flatband voltage shift in MOS capacitors on n-type GaNIEEE Electron Device Letters, 2002
- Power electronics on InAlN/(In)GaN: Prospect for a record performanceIEEE Electron Device Letters, 2001
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructuresJournal of Applied Physics, 2000
- Measurement of semiconductor–insulator interface states by constant-capacitance deep-level transient spectroscopyJournal of Vacuum Science and Technology, 1982
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974