Positive flatband voltage shift in MOS capacitors on n-type GaN
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (2), 79-81
- https://doi.org/10.1109/55.981312
Abstract
GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900/spl deg/C. The MOS capacitor flatband voltage shift versus temperature was used to determine a pyroelectric charge coefficient of 3.7 /spl times/ 10/sup 9/ q/cm/sup 2/-K, corresponding to a pyroelectric voltage coefficient of 7.0 /spl times/ 10/sup 4/ V/m-K.Keywords
This publication has 12 references indexed in Scilit:
- Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited OxidesMaterials Science Forum, 2002
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structuresIEEE Transactions on Electron Devices, 2001
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Undoped AlGaN/GaN HEMTs for microwave power amplificationIEEE Transactions on Electron Devices, 2001
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistorsApplied Physics Letters, 2000
- Fabrication and characterization of GaN FETsSolid-State Electronics, 1997
- Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlatticesJournal of Applied Physics, 1997
- Pyroelectricity in gallium nitride thin filmsApplied Physics Letters, 1996
- Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interfaceJournal of Electronic Materials, 1995