Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
- 21 August 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (8), 081905
- https://doi.org/10.1063/1.2245436
Abstract
The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal plane sapphire substrates. This approach, at temperatures in excess of 1150°C, enhanced the adatom migration, thereby significantly increasing the lateral growth rates. This enabled a full coalescence in wing regions as wide as 4–10μm. Atomic force microscopy and cross-section transmission electron microscopy were used to establish the reduction of threading dislocations in the lateral growth. Cross-sectional monochromatic cathodoluminescence and photoluminescence measurements confirmed the improved optical properties of the laterally overgrown aluminum nitride films.Keywords
This publication has 8 references indexed in Scilit:
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC SubstratesJapanese Journal of Applied Physics, 2005
- Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaNApplied Physics Letters, 2004
- A new method to fabricate InGaN quantum dots by metalorganic chemical vapor depositionJournal of Crystal Growth, 2002
- Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substratesphysica status solidi (a), 2001
- Ab initio Analysis of Surface Structure and Adatom Kinetics of Group-III NitridesPhysica Status Solidi (b), 2001
- Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor depositionApplied Physics Letters, 2000
- Adatom diffusion at GaN (0001) and (0001̄) surfacesApplied Physics Letters, 1998
- Low pressure metalorganic chemical vapor deposition of AIN over sapphire substratesApplied Physics Letters, 1992