Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- 1 March 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (3L), L405
- https://doi.org/10.1143/jjap.44.l405
Abstract
Fully coalesced Al0.93Ga0.07N films were demonstrated by metalorganic chemical vapor deposition on deep grooved SiC substrates. Lateral Al0.93Ga0.07N growth was achieved at low V/III ratios during growth. The deep grooves enabled coalescence despite of parasitic growth in the trenches. Dislocation reduction in the overgrown regions of the films was observed by transition electron microscopy and atomic force microscopy.Keywords
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