Theoretical study of GaN growth: A Monte Carlo approach

Abstract

An atomistic model consistent with a variety of experimental observations is developed for GaNgrowth by molecular‐beam epitaxy. The model is used in Monte Carlo simulation to study the impact of substrate temperature, Ga flux, and V/III (group‐V element to group‐III element) ratio on growth rate and growth front quality. The growth rate increases with the V/III ratio reaching a saturation value which is determined by the Ga flux. The quality of the growth front improves by using a smaller Ga flux for a fixed temperature and V/III ratio or by reducing the V/III ratio at a given temperature. A consideration of the growth kinetics suggests that GaNgrown surfaces are likely to be Ga stabilized. These theoretically estimated trends are evidenced by two‐dimensional and three‐dimensional growth front contours evaluated under various growth conditions.