Perspective On Gallium Nitride
- 1 January 1989
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- On the origin of free carriers in high‐conducting n‐GaNCrystal Research and Technology, 1983
- Defects in epitaxial multilayers: III. Preparation of almost perfect multilayersJournal of Crystal Growth, 1976
- High pressure solution growth of GaNJournal of Crystal Growth, 1975
- Photoemission from GaNApplied Physics Letters, 1974
- Cubic phase gallium nitride by chemical vapour depositionphysica status solidi (a), 1974
- Luminescence in GaNJournal of Luminescence, 1973
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971