Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m
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- 5 February 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 13 (1), 111-124
- https://doi.org/10.1109/jstqe.2006.887154
Abstract
This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 mum. These two types of QDs can provide high gain and low losses. Continuous-wave (CW) room-temperature lasing operation on ground state of cavity length as short as 200 mum has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad-area (BA) lasers, and of 80 K for single-transverse-mode lasers in the temperature range between 25degC and 85degC. Buried ridge stripe (BRS)-type single-mode distributed feedback (DFB) lasers are also demonstrated for the first time, exhibiting a side-mode suppression ratio (SMSR) as high as 45 dB. Such DFB lasers allow the first floor-free 10-Gb/s direct modulation for back-to-back and transmission over 16-km standard optical fiber. In addition, novel results are given on gain, noise, and four-wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD Fabry-Perot (FP) lasers, owing to the small confinement factor and the three-dimensional (3-D) quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time-jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step toward the application of QD lasers and amplifiers to the field of optical fiber communicationsKeywords
This publication has 36 references indexed in Scilit:
- Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasersApplied Physics Letters, 2005
- Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laserElectronics Letters, 2005
- 45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 [micro sign]mElectronics Letters, 2005
- Static and dynamic properties of laterally coupled DFB lasers based on InAs∕InP QDash structuresElectronics Letters, 2005
- Room-Temperature Operation of InP-Based InAs Quantum Dot LaserIEEE Photonics Technology Letters, 2004
- Multiple wavelength amplification in wide band high power 1550 nm quantum dash optical amplifierElectronics Letters, 2004
- Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speedIEEE Journal of Quantum Electronics, 2002
- Single-mode distributed feedback and microlasers based on quantum-dot gain materialIEEE Journal of Selected Topics in Quantum Electronics, 2002
- Height dispersion control of InAs/InP quantum dots emitting at 1.55 μmApplied Physics Letters, 2001
- Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substratesApplied Physics Letters, 2001