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Pendeoepitaxy of GaN and InGaN LEDs on SiC
Home
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Pendeoepitaxy of GaN and InGaN LEDs on SiC
Pendeoepitaxy of GaN and InGaN LEDs on SiC
HK
H.S. Kong
H.S. Kong
JE
J. Edmond
J. Edmond
KD
K. Doverspike
K. Doverspike
DE
D. Emerson
D. Emerson
GB
G. Bulman
G. Bulman
KH
K. Haberern
K. Haberern
HD
H. Dieringer
H. Dieringer
DS
D. Slater
D. Slater
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1 May 2000
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 338-342
,
1477-1482
https://doi.org/10.4028/www.scientific.net/msf.338-342.1477
Abstract
No abstract available
Keywords
EPITAXY
GALLIUM NITRIDE (GAN)
LIGHT EMITTING DIODE (LED)
SILICON CARBIDE (SIC)
Cited by 4 articles