Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
- 7 March 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (10), 103509
- https://doi.org/10.1063/1.3564882
Abstract
Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift (>7.1 V) in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm O2 ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from VO to VO2+ was responsible for the NBIS-induced instability.This publication has 18 references indexed in Scilit:
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