12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors
- 1 February 2009
- journal article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 17 (2), 95-100
- https://doi.org/10.1889/jsid17.2.95
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatmentApplied Physics Letters, 2007
- High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopperApplied Physics Letters, 2007
- Flexible Full-Color AMOLED on Ultrathin Metal FoilIEEE Electron Device Letters, 2007
- A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting DiodeIEEE Electron Device Letters, 2006
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- A New Voltage-Modulated AMOLED Pixel Design Compensating for Threshold Voltage Variation in Poly-Si TFTsIEEE Electron Device Letters, 2004
- Bias-induced threshold voltages shifts in thin-film organic transistorsApplied Physics Letters, 2004
- Polysilicon TFT technology for active matrix OLED displaysIEEE Transactions on Electron Devices, 2001
- Device analysis for a-Si:H thin-film transistors with organic passivation layerIEEE Electron Device Letters, 1998