The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates
- 30 April 2011
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 88 (4), 370-372
- https://doi.org/10.1016/j.mee.2010.09.027
Abstract
No abstract availableKeywords
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