Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
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- 5 July 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 11 (8), 3190-3196
- https://doi.org/10.1021/nl201432g
Abstract
We present a Raman study of Ar+-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.Keywords
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