Defect Scattering in Graphene
- 12 June 2009
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 102 (23), 236805
- https://doi.org/10.1103/physrevlett.102.236805
Abstract
Irradiation of graphene on by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is 4 times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than , the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in midgap states.
Keywords
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