Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(111)
- 1 December 2010
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 257 (4), 1161-1165
- https://doi.org/10.1016/j.apsusc.2010.07.073
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
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