III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
- 12 September 2011
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (11)
- https://doi.org/10.1063/1.3638474
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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