High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
- 21 July 2008
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (3)
- https://doi.org/10.1063/1.2956393
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Inversion mode n-channel GaAs field effect transistor with high-k/metal gateApplied Physics Letters, 2008
- Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parametersApplied Physics Letters, 2008
- Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructureApplied Physics Letters, 2006
- Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layerApplied Physics Letters, 2006
- Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3Applied Physics Letters, 2005
- Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer depositionApplied Physics Letters, 2004
- Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide PassivationScience, 1999
- Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETsIEEE Electron Device Letters, 1998
- Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxideSolid-State Electronics, 1997
- Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfacesJournal of Crystal Growth, 1997