Non-local aspects of breakdown in pin diodes
- 1 March 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (3), 344-347
- https://doi.org/10.1088/0268-1242/10/3/018
Abstract
Measurements of breakdown voltage in p-i-n diodes with thin i regions are compared with local and non-local theoretical calculations. It is found that overshoot effects compensate for the dead space at high fields close to breakdown but that non-local aspects become stronger at lower fields.Keywords
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