Breakdown voltage in ultra-thin pin diodes
- 1 November 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (11), 1993-1998
- https://doi.org/10.1088/0268-1242/8/11/009
Abstract
The semianalytic trajectory method for hot carrier transport is combined with a new model for impact ionization to study breakdown in ultra-thin pin diodes where the dead space and spatial transient can dominate the ionization physics. Good agreement with the published data of Gaul et al (1991) is achieved.Keywords
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