Current-Induced Magnetization Switching with a Spin-Polarized Scanning Tunneling Microscope
- 14 September 2007
- journal article
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 317 (5844), 1537-1540
- https://doi.org/10.1126/science.1145336
Abstract
Switching the magnetization of a magnetic bit by injection of a spin-polarized current offers the possibility for the development of innovative high-density data storage technologies. We show how individual superparamagnetic iron nanoislands with typical sizes of 100 atoms can be addressed and locally switched using a magnetic scanning probe tip, thus demonstrating current-induced magnetization reversal across a vacuum barrier combined with the ultimate resolution of spin-polarized scanning tunneling microscopy. Our technique allows us to separate and quantify three fundamental contributions involved in magnetization switching (i.e., current-induced spin torque, heating the island by the tunneling current, and Oersted field effects), thereby providing an improved understanding of the switching mechanism.Keywords
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