Spin-transfer effects in nanoscale magnetic tunnel junctions
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- 16 August 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (7), 1205-1207
- https://doi.org/10.1063/1.1781769
Abstract
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ω μ m 2 , barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin polarized at these voltages.Keywords
Other Versions
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