Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for protons and heavy ions in silicon
- 15 September 2012
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 287, 124-129
- https://doi.org/10.1016/j.nimb.2012.06.007
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological NodeIEEE Transactions on Nuclear Science, 2011
- Comparison of GEANT4 very low energy cross section models with experimental data in waterMedical Physics, 2010
- Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct IonizationIEEE Transactions on Nuclear Science, 2010
- Monte Carlo Simulation of Single Event EffectsIEEE Transactions on Nuclear Science, 2010
- Validation of the Geant4 electromagnetic photon cross-sections for elements and compoundsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2010
- Geant4 developments and applicationsIEEE Transactions on Nuclear Science, 2006
- Ion and electron track-structure and its effects in silicon: model and calculationsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005
- Spatial and temporal characteristics of energy deposition by protons and alpha particles in siliconIEEE Transactions on Nuclear Science, 2004
- Geant4—a simulation toolkitNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003
- Ion-track structure and its effects in small size volumes of siliconIEEE Transactions on Nuclear Science, 2002