Fundamental Thickness Limit of Itinerant FerromagneticThin Films
- 30 July 2009
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 103 (5), 057201
- https://doi.org/10.1103/physrevlett.103.057201
Abstract
We report on a fundamental thickness limit of the itinerant ferromagnetic oxide that might arise from the orbital-selective quantum confinement effects. Experimentally, films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the decrease to a decrease in the density of states (). Namely, in the thin film geometry, the hybridized Ru orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of .
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This publication has 24 references indexed in Scilit:
- Quantum size effects in metallic nanostructuresPhysics Today, 2007
- Origin of the dielectric dead layer in nanoscale capacitorsNature, 2006
- Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3Applied Physics Letters, 2004
- Thermal stability of epitaxial SrRuO3 films as a function of oxygen pressureApplied Physics Letters, 2004
- Electric field effect in correlated oxide systemsNature, 2003
- Critical thickness for ferroelectricity in perovskite ultrathin filmsNature, 2003
- Inverse tunnel magnetoresistance in all-perovskite junctions ofPhysical Review B, 2003
- Electronic structure and magnetism in Ru-based perovskitesPhysical Review B, 1997
- Thermal, magnetic, and transport properties of single-crystalPhysical Review B, 1997
- Magnetoresistance probe of spatial current variations in high-T c YBa2Cu3O7–SrRuO3–YBa2Cu3O7 Josephson junctionsApplied Physics Letters, 1995