Gain mechanism in GaN Schottky ultraviolet detectors
- 3 September 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (10), 1417-1419
- https://doi.org/10.1063/1.1394717
Abstract
Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration, as well as in a metal–semiconductor–metal geometry were implemented. All devices exhibit a high gain at both reverse and forward bias. The photoresponse in the forward bias is in the positive current direction. We attribute the gain to trapping of minority carriers at the semiconductor–metal interface. The excellent agreement between the calculated responsivity and the experiment indicates that the model is valid for all device structures under study, and represents a unified description of gain mechanism in GaN Schottky detectors.Keywords
This publication has 15 references indexed in Scilit:
- SiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectorsApplied Physics Letters, 2000
- Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaNphysica status solidi (a), 1999
- AlGaN metal–semiconductor–metal photodiodesApplied Physics Letters, 1999
- High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaNApplied Physics Letters, 1999
- Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaNJournal of Applied Physics, 1998
- Visible-blind GaN Schottky barrier detectors grown on Si(111)Applied Physics Letters, 1998
- Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectorsApplied Physics Letters, 1998
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layersApplied Physics Letters, 1997
- High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaNApplied Physics Letters, 1996