SiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectors
- 2 August 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (6), 863-865
- https://doi.org/10.1063/1.1306647
Abstract
We report on a transparent Schottky-barrier ultraviolet detector on GaN layers over sapphire substrates. Using surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.
Keywords
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