Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
- 20 October 2014
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Communications
- Vol. 5 (1), 5290
- https://doi.org/10.1038/ncomms6290
Abstract
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here we develop a facile low-temperature thiol chemistry route to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility >80 cm2 V−1 s−1 is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.Keywords
This publication has 41 references indexed in Scilit:
- Transport Properties of Monolayer MoS2 Grown by Chemical Vapor DepositionNano Letters, 2014
- MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx ContactsNano Letters, 2014
- Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materialsNature Nanotechnology, 2013
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2Nano Letters, 2013
- Mobility engineering and a metal–insulator transition in monolayer MoS2Nature Materials, 2013
- Ultrasensitive photodetectors based on monolayer MoS2Nature Nanotechnology, 2013
- Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide FilmsNano Letters, 2013
- Integrated Circuits Based on Bilayer MoS2 TransistorsNano Letters, 2012
- Phonon-limited mobility in-type single-layer MoSfrom first principlesPhysical Review B, 2012
- Performance Limits of Monolayer Transition Metal Dichalcogenide TransistorsIEEE Transactions on Electron Devices, 2011