Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
Top Cited Papers
- 5 October 2015
- journal article
- research article
- Published by American Physical Society (APS) in Reviews of Modern Physics
- Vol. 87 (4), 1139-1151
- https://doi.org/10.1103/revmodphys.87.1139
Abstract
DOI: https://doi.org/10.1103/RevModPhys.87.1139Keywords
Funding Information
- Nichia Chemical Corporation
This publication has 42 references indexed in Scilit:
- Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxyJournal of Applied Physics, 2015
- Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency DroopPhysical Review Letters, 2013
- Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependenceApplied Physics Letters, 2005
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrateThin Solid Films, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Analysis ofLuminescence in Zn-Doped GaPPhysical Review B, 1961
- Electroluminescence at p-n Junctions in Gallium PhosphideJournal of Applied Physics, 1961
- Grain Boundaries and Electroluminescence in Gallium PhosphideNature, 1958