Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
- 1 September 1988
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 163, 415-420
- https://doi.org/10.1016/0040-6090(88)90458-0
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986