Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
- 1 October 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (7), 4430-4437
- https://doi.org/10.1063/1.354414
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBEMRS Proceedings, 1992
- A Comparative Study of GaN Epitaxy on Si(001) and SI(111) SubstratesMRS Proceedings, 1992
- Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting DevicesMRS Proceedings, 1992
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire SubstratesMRS Proceedings, 1989
- Perspective On Gallium NitrideMRS Proceedings, 1989
- Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1987
- The surfaces of metal oxidesReports on Progress in Physics, 1985
- X‐Ray Diffraction Topography and Crystal Characterization of GaN Epitaxial Layers for Light‐Emitting DiodesJournal of the Electrochemical Society, 1978
- Epitaxial Growth of Undoped and Mg-Doped GaNJapanese Journal of Applied Physics, 1976