Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
- 8 May 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 35 (7), 732-734
- https://doi.org/10.1109/led.2014.2321003
Abstract
In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al 2 O 3 /AlN stack gate insulator is presented. The trapping effect of Al 2 O 3 /GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an OFF-state breakdown voltage of 600 V, and high ON/OFF drain current ratio of ~10 9 .Keywords
Funding Information
- Ministry of Economic Affairs, Taiwan (101-EC-17-A-05-S1-154)
- Ministry of Science and Technology, NCTU-UCB I-RiCE Program, Taiwan (MOST NSC-103-2911-I-009-302)
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