Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source
- 22 February 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (8), 840-842
- https://doi.org/10.1063/1.108568
Abstract
The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm−3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.Keywords
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