ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications
- 17 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (7), 892-894
- https://doi.org/10.1063/1.106496
Abstract
pn junction characteristics and LED action in ZnSe‐based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p‐type GaAs epilayers, and designed with a heavily doped n+‐ZnSe top contact layer may be appropriate for display device applications in the blue‐green portion of the spectrum.Keywords
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