AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator
- 1 March 2015
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 105, 1-5
- https://doi.org/10.1016/j.sse.2014.11.023
Abstract
No abstract availableKeywords
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