High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
- 27 December 2012
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility TransistorsJapanese Journal of Applied Physics, 2011
- Improved Linearity for Low-Noise Applications in 0.25-$ \mu\hbox{m}$ GaN MISHEMTs Using ALD $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate DielectricIEEE Electron Device Letters, 2010
- Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate DielectricsIEEE Electron Device Letters, 2010
- High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALDIEEE Electron Device Letters, 2009
- High performance AlGaN/GaN power switch with HfO2 insulationApplied Physics Letters, 2009
- Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistorApplied Physics Letters, 2007
- Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistorsApplied Physics Letters, 2006
- Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mmIEEE Electron Device Letters, 2005
- Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistorsPhysica Status Solidi (a), 2005
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999