The performance and reliability of 800–880 nm InAlGaAs/AlGaAs and InGaAs/AlGaAs strained layer ridge waveguide lasers
- 1 November 1992
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 124 (1-4), 703-708
- https://doi.org/10.1016/0022-0248(92)90539-u
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grown by metalorganic chemical vapor depositionIEEE Photonics Technology Letters, 1992
- High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasersIEEE Photonics Technology Letters, 1991
- AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum wellIEEE Photonics Technology Letters, 1991
- AlGaInAs/AlGaAs SSQW GRINSCH lasers for the wavelength region between 800 and 870 nmElectronics Letters, 1991
- AlInGaAs-AlGaAs strained single-quantum-well diode lasersIEEE Photonics Technology Letters, 1991
- Dislocation pinning in GaAs by the deliberate introduction of impuritiesIEEE Journal of Quantum Electronics, 1975