Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
Top Cited Papers
- 23 November 2006
- journal article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 90 (18-19), 3438-3443
- https://doi.org/10.1016/j.solmat.2006.04.014
Abstract
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This publication has 3 references indexed in Scilit:
- Deposition and dielectric properties of (Al2O3)x(TiO2)1−x thin filmsJournal of Materials Science: Materials in Electronics, 2003
- Evidence of a high density of fixed negative charges in an insulation layer compound on siliconThin Solid Films, 2001
- Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequenceSurface Science, 1995